NTD4906N
TYPICAL PERFORMANCE CURVES
125
100
10 V
7V
4.5 V
4.2 V
4V
3.8 V
3.6 V
100
80
V DS ≥ 10 V
T J = 125 ° C
75
3.4 V
60
50
3.2 V
3.0 V
40
T J = 25 ° C
25
0
0
1
2
3
4
2.8 V
2.6 V
2.4 V
5
20
0
2
2.5
T J = ? 55 ° C
3
3.5
4
4.5
5
0.010
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
0.010
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.009
0.008
0.007
0.006
0.005
I D = 30 A
T J = 25 ° C
0.009
0.008
0.007
0.006
0.005
T J = 25 ° C
V GS = 4.5 V
V GS = 10 V
0.004
3
4
5
6
7
8
9
10
0.004
15
25
35
45
55
65
75
85
95 105 115 125
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
2.0
1.8
1.6
1.4
I D = 30 A
V GS = 10 V
10,000
1000
V GS = 0 V
T J = 150 ° C
T J = 125 ° C
1.2
1.0
0.8
100
T J = 85 ° C
0.6
? 50 ? 25
0
25
50
75
100
125
150
175
10
5
10
15
20
25
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Drain Voltage
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相关代理商/技术参数
NTD4909N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK
NTD4909N-1G 功能描述:MOSFET NFET DPAK 30V 41A 8.0 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4909N-35G 功能描述:MOSFET NFET DPAK 30V 41A 8.0 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4909NA-1G 功能描述:MOSFET NFET DPAK 30V 41A 8 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4909NA-35G 功能描述:MOSFET NFET DPAK 30V 41A 8 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4909NAT4G 功能描述:MOSFET NFET DPAK 30V 41A 8.0 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4909NAT4H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
NTD4909NT4G 功能描述:MOSFET NFET DPAK 30V 41A 8.0 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube